Transferred-substrate InP/InGaAs/InP double heterojunction bipolar transistors with fmax = 425 GHz Lee, S. ; Kim, H. J. ; Urteaga, M. ; Krishnan, S. ; Wei, Y. ; Dahlstrǒm, M. ; Rodwell, M. Abstract Publication: Electronics Letters Pub Date: 2001 DOI: 10.1049/el:20010728 Bibcode: 2001ElL....37.1096L