Low Temperature Mechanical Dissipation in Ultrathin Single Crystal Silicon Cantilevers
Abstract
Ultrathin single-crystal silicon cantilevers have been used to demonstrate attonewton force resolution at 4K. The force resolution of these cantilevers is limited by thermomechanical noise, the analog of Johnson noise in a resistor. Measurements have indicated that the mechanical energy dissipation in ultrathin silicon cantilevers has a strong dependence on temperature. Initial measurements of the dissipation in an ultrathin silicon cantilever with areas of high levels of boron doping show a broad dissipation peak centered at about 135K and a sharp dissipation peak centered at 13K. Thus, experiments operated near these temperatures would suffer from reduced force resolution. We present results from an ongoing study to determine the physical nature of these dissipation peaks by investigating the dissipation as a function of the material and doping properties of the cantilevers.
- Publication:
-
APS March Meeting Abstracts
- Pub Date:
- March 2001
- Bibcode:
- 2001APS..MAR.A7007T