Electronic Structure of SI(111): SN-(√ {3} × √ {3}) R 30<SUP>o</SUP>:. AN AB Initio Study

doi:10.1142/9789812793652_0020

Electronic Structure of SI(111): SN-(√ {3} × √ {3}) R 30^o:. AN AB Initio Study

Different coverages of Sn on Si(111) have been investigated by means of ab initio molecular dynamics simulations. The resulting structure, density of states and Schottky barrier have been determined for the relaxed configurations and are compared with experimental results.

Publication:: Structure and Dynamics of Heterogeneous Systems
Pub Date:: April 2000
DOI:: 10.1142/9789812793652_0020
Bibcode:: 2000sdhs.conf..217S

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Electronic Structure of SI(111): SN-(√ {3} × √ {3}) R 30o:. AN AB Initio Study

Abstract

Electronic Structure of SI(111): SN-(√ {3} × √ {3}) R 30^o:. AN AB Initio Study