Tunneling in the SIS Structure
Abstract
We discuss the effects caused by the layered structure of high temperature superconductors (HTS). We use the layered S-N model to obtain the tunneling current of the SIS structure. The current-voltage characteristic is calculated in the limit cases when dI/dV is proportional to the state density of HTS.
- Publication:
-
Magnetic and Superconducting Materials
- Pub Date:
- September 2000
- DOI:
- Bibcode:
- 2000mcm..conf..385S