Hopping conductivity and specific heat in insulating amorphous Ti_{x}Si_{100x} alloys
Abstract
Insulting amorphous Ti_{x}Si_{100x}(x<9.5) alloys are characterized by the Motttype variablerange hopping (VRH) conduction and a finite electronic specific heat coefficient γ at low temperatures. We use magnetoresistance data to deduce the localization radius ξ and the density of electronic states N_{0} responsible for the dc transport in the system. The value of N_{0} thus obtained was found to be two orders of magnitude less than the specific heat density of states defined as g_{0}=3γ/π^{2}k^{2}_{B}. We conclude that, in insulating amorphous Ti_{x}Si_{100x} alloys, the finite electronic specific heat coefficient γ and the parameters of the Motttype VRH does not relate to each other within the oneelectron transport model of noninteracting electrons.
 Publication:

Physical Review B
 Pub Date:
 June 2000
 DOI:
 10.1103/PhysRevB.61.15550
 Bibcode:
 2000PhRvB..6115550R
 Keywords:

 72.20.Ee;
 65.40.+g;
 71.30.+h;
 72.15.Rn;
 Mobility edges;
 hopping transport;
 Metalinsulator transitions and other electronic transitions;
 Localization effects