BGaInAs alloys lattice matched to GaAs
Abstract
We report the epitaxial growth of zinc-blende BxGa1-x-yInyAs and BxGa1-xAs on GaAs substrates with boron concentrations (x) up to 2%-4% by atmospheric-pressure metalorganic chemical vapor deposition. The band gap of BxGa1-xAs increases by only 4-8 meV/%B with increasing boron concentration in this concentration range. We demonstrate an epitaxial BxGa1-x-yInyAs layer deposited on GaAs with a band gap of 1.34 eV that is significantly less strained than a corresponding Ga1-yInyAs layer with the same band gap.
- Publication:
-
Applied Physics Letters
- Pub Date:
- March 2000
- DOI:
- 10.1063/1.126058
- Bibcode:
- 2000ApPhL..76.1443G
- Keywords:
-
- 81.05.Ea;
- 81.15.Kk;
- 81.15.Gh;
- 73.20.At;
- 68.55.Jk;
- III-V semiconductors;
- Vapor phase epitaxy;
- growth from vapor phase;
- Chemical vapor deposition;
- Surface states band structure electron density of states;
- Structure and morphology;
- thickness;
- crystalline orientation and texture