Time-resolved electroabsorption measurement of the electron velocity-field characteristic in GaN
Abstract
A femtosecond optically detected time-of-flight technique that monitors the change in the electroabsorption associated with the transport of photogenerated carriers in a GaN p-i-n diode has been used to determine the room-temperature electron transit time and steady-state velocity as a function of electric field. The peak electron velocity of 1.9×107 cm/s, corresponding to a transit time of 2.5 ps, is attained at 225 kV/cm. The shape of the velocity-field characteristic is in qualitative agreement with theoretical predictions.
- Publication:
-
Applied Physics Letters
- Pub Date:
- February 2000
- DOI:
- 10.1063/1.125968
- Bibcode:
- 2000ApPhL..76.1155W
- Keywords:
-
- 81.05.Ea;
- 78.20.Jq;
- 78.47.+p;
- 73.50.Pz;
- 85.60.Dw;
- 73.61.Ey;
- 78.66.Fd;
- III-V semiconductors;
- Electrooptical effects;
- Time-resolved optical spectroscopies and other ultrafast optical measurements in condensed matter;
- Photoconduction and photovoltaic effects;
- Photodiodes;
- phototransistors;
- photoresistors;
- III-V semiconductors;
- III-V semiconductors