Radiation hard strip detectors for large-scale silicon trackers

Major challenges in building silicon strip detectors for future high luminosity experiments are the high radiation level and the huge number of sensors required for the construction of the precision layers of the complete tracking system. Single-sided p ⁺n strip detectors for ATLAS SCT designed and fabricated at the MPI Semiconductor Laboratory have been exposed to 3×10 ¹⁴/cm ² 24 GeV protons. The major features of the design, including the biasing technique using implanted resistors, are discussed and results are presented. The technology was transferred to CiS, Germany, a company capable of the desired large-scale production. Results of this industrially fabricated sensors look very promising and show the expected radiation hardness.