Electrical characterization of standard and oxygenated irradiated ROSE diodes

Pure and oxygenated n-type silicon samples have been characterized by Hall mobility and conductivity measurements as a function of temperature, before and after irradiation. p ⁺n silicon diodes have been characterized by C-V and reverse current measurements as a function of temperature. Investigated samples have been grown by FZ technique in Polovodice (Prague) and have been irradiated with protons at CERN facilities ( Φ=4×10 ¹²-10 ¹⁴ protons/cm ²). Carrier concentrations have been evaluated by conductivity and Hall mobility measurements. C-V measurements on irradiated diodes ( Φ≅10 ¹² protons/cm ²) show a decrease of the effective concentration N _eff with respect to unirradiated samples. Reverse current measurements as a function of temperature show that oxygenated diode has a leakage current lower than that of pure diode at temperatures less than 250 K.