First results on radiation damage studies using n+/p//p+ diodes fabricated with multi-guard ring structures1

First measurements of silicon PIN diodes and multi-guard structures, fabricated from 10 k Ω cm p-type material in an n ⁺/p/p ⁺ configuration are presented. Studies of the effects of irradiation with 2.0×10 ¹⁴ p/cm ² at 63.3 MeV on the charge collection efficiency, leakage current, and breakdown are presented, along with studies of different guard ring configurations.