Impact of nanostructure research on conventional solid-state electronics: The giant isotope effect in hydrogen desorption and CMOS lifetime

A theory of desorption of silicon-hydrogen/deuterium bonds and of depassivation of the silicon-oxide interface of CMOS integrate circuits is presented. First, the physics of two competing depassivation mechanisms and the hydrogen/deuterium isotope effect for each are discussed in the light of recent STM and MOS device studies. A phenomenological model of depassivation in MOS devices based on STM data then is presented that addresses the potential significance of these competing desorption mechanisms and their respective isotope effects on device reliability and lifetime. Finally, initial work to develop a more rigorous, first-principles theory of desorption is described. In the process it is demonstrated that experimental and theoretical methods of nanostructure physics have a direct relevance to conventional silicon-based integrated circuit technology.