The impact of deep acceptors on the performance of VPE-GaAs X-ray detectors
Abstract
Gallium Arsenide layers grown using low pressure Vapour-Phase Epitaxy (LP-VPE) were studied with CV, Hall-measurements and Photoluminescence. The results have been analysed for the general investigation of the influence of material properties on particle detector performance for X-ray applications. This p-type material exhibits a free carrier concentration of 1.3 × 10 11 cm -3 at room temperature and was compensated by the presence of shallow donors and deep acceptors. Because of this, the detector performance was restricted by the space-charge density of the order of 10 14 cm -3.
- Publication:
-
Nuclear Instruments and Methods in Physics Research A
- Pub Date:
- February 1998
- DOI:
- 10.1016/S0168-9002(98)00171-5
- Bibcode:
- 1998NIMPA.410...92R