Experimental results on GaAs switching devices for HEP
Abstract
In this work we present the preliminary results on an optically activated GaAs diode which can be used to control HV bias on Si and MSGC detectors.
- Publication:
-
Nuclear Instruments and Methods in Physics Research A
- Pub Date:
- February 1998
- DOI:
- 10.1016/S0168-9002(98)00137-5
- Bibcode:
- 1998NIMPA.410...26B