High-density, inductively coupled plasma etch of sub half-micron critical layers: Transistor polysilicon gate definition and contact formation
Abstract
- Publication:
-
Journal of Vacuum Science Technology B: Microelectronics and Nanometer Structures
- Pub Date:
- September 1998
- DOI:
- 10.1116/1.590260
- Bibcode:
- 1998JVSTB..16.2699W