Eu:CaF2 layers on p-Si(100) grown using molecular beam epitaxy as materials for Si-based optoelectronics
Abstract
- Publication:
-
Journal of Vacuum Science Technology B: Microelectronics and Nanometer Structures
- Pub Date:
- May 1998
- DOI:
- 10.1116/1.589966
- Bibcode:
- 1998JVSTB..16.1463C