Ga<SUP> + </SUP> focused-ion-beam exposure and CF<SUB>4</SUB> reactive-ion-etching development of Si<SUB>3</SUB>N<SUB>4</SUB> resist optimized by Monte Carlo simulation - NASA/ADS

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NASA/ADS

Ga⁺ focused-ion-beam exposure and CF₄ reactive-ion-etching development of Si₃N₄ resist optimized by Monte Carlo simulation

Publication:: Journal of Vacuum Science Technology B: Microelectronics and Nanometer Structures
Pub Date:: May 1998
DOI:: 10.1116/1.590086
Bibcode:: 1998JVSTB..16.1161L

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