MOVPE of AlAsSb using tritertiarybutylaluminum
Abstract
We investigated the growth of AlAs 0.16Sb 0.84 by using tritertiarybutylaluminum (TTBAl), tertiarybutylarsine (TBAs) and triethylantimony (TESb) as precursors. AlAs 0.16Sb 0.84 layers, which are lattice-matched to InAs substrates, are used as cladding layers for Sb-based IR-lasers. The use of a dilution line for TBAs reduces inhomogenities of the As content in the solid. X-ray diffraction results show that layers have good structural qualities. No gas phase prereactions are observed among the precursors. The precursor combination is suitable to reduce C and O incorporation in AlAsSb. We achieved undoped AlAs 0.16Sb 0.84 with low hole concentrations between 5×10 16 and 3×10 17 cm -3 and very high mobilities up to 500 cm 2/(V s) at 77 K and 300 cm 2/(V s) at room temperature. P- and n-type doping of 2×10 19 and 5×10 16 cm -3 are obtained by using diethylzinc (DEZn) and diethyltellurium (DETe), respectively.
- Publication:
-
Journal of Crystal Growth
- Pub Date:
- December 1998
- DOI:
- 10.1016/S0022-0248(98)00670-8
- Bibcode:
- 1998JCrGr.195...85G