Binding Energy of Biexcitons in Two-Dimensional Semiconductors
Abstract
The binding energies of a two-dimensional (2D) biexciton have been calculated variationally for all values of the effective electron-to-hole mass ratio σ by using a three-parameter wave function. The ratio of the binding energy of a 2D biexciton to that of a 2D exciton is found to be from 0.582 to 0.220. The results agree fairly well with previous experimental results. The results of this approach are compared with those of earlier theories.
- Publication:
-
Chinese Physics Letters
- Pub Date:
- August 1998
- DOI:
- 10.1088/0256-307X/15/8/016
- Bibcode:
- 1998ChPhL..15..588L