Heatingassisted atom transfer in the scanning tunneling microscope
Abstract
The effects of a voltage pulse on the localization probability for a Xe atom prepared in a pure state localized on the STM surface at 0 temperature is investigated by numerically integrating the timedependent Schroedinger equation. In these calculations the environmental interactions are neglected, and voltage pulses of 20 and 7 ns with symmetric triangular and trapezoidal shapes are considered. The atom dynamics at an environmental temperature of 4 K is studied in the frame of a stochastic, nonlinear Liouville equation for the density operator. It is shown that the irreversible transfer from surface to tip may be explained by thermal decoherence rather than by the driving force acting during the application of the voltage pulse.
 Publication:

Canadian Journal of Physics
 Pub Date:
 December 1998
 DOI:
 10.1139/p98066
 arXiv:
 arXiv:physics/9709030
 Bibcode:
 1998CaJPh..76..911G
 Keywords:

 Physics  Atomic Physics;
 Quantum Physics
 EPrint:
 14 pages, Latex, 4 postscript figures