1.3 μm room-temperature GaAs-based quantum-dot laser
Abstract
Room-temperature lasing at the wavelength of 1.31 μm is achieved from the ground state of an InGaAs/GaAs quantum-dot ensemble. At 79 K, a very low threshold current density of 11.5 A/cm2 is obtained at a wavelength of 1.23 μm. The room-temperature lasing at 1.31 μm is obtained with a threshold current density of 270 A/cm2 using high-reflectivity facet coatings. The temperature-dependent threshold with and without high-reflectivity end mirrors is studied, and ground-state lasing is obtained up to the highest temperature investigated of 324 K.
- Publication:
-
Applied Physics Letters
- Pub Date:
- November 1998
- DOI:
- 10.1063/1.122534
- Bibcode:
- 1998ApPhL..73.2564H
- Keywords:
-
- 42.55.Px;
- 73.20.Dx;
- 85.30.Vw;
- 42.79.Bh;
- 42.60.Lh;
- Semiconductor lasers;
- laser diodes;
- Lenses prisms and mirrors;
- Efficiency stability gain and other operational parameters