Resistivity of boron-doped diamond microcrystals
Abstract
We describe measurements of the electrical resistivity of micron-size crystallites of boron-doped diamond. Electron-beam lithography was employed for writing sample-specific contacts on small, well-faceted diamond crystals grown by chemical-vapor deposition on silicon substrates. After generating a three-dimensional computer model of the crystallite, a finite-element analysis was used to calculate the internal electrostatic potential distribution. Multiterminal resistance measurements, in conjunction with a computed geometrical factor, enabled the absolute resistivity to be determined. We find that the resistivities obtained from two different crystallites agree to better than 10%. The results are compared with transport measurements on a large-area homoepitaxial diamond film grown simultaneously with the crystallites. This method can be generalized to obtain electrical transport properties of other small, irregularly shaped samples.
- Publication:
-
Applied Physics Letters
- Pub Date:
- May 1998
- DOI:
- 10.1063/1.121680
- Bibcode:
- 1998ApPhL..72.2445J
- Keywords:
-
- 72.80.Cw;
- 72.20.Fr;
- Elemental semiconductors;
- Low-field transport and mobility;
- piezoresistance