PECVD of Silicon thin films
Abstract
ECR-generated plasma operating in SiH4/H2 gas mixture was used to deposit silicon films on amorphous substrates. By changing plasma conditions and gas composition it is possible to control the phase of the deposited films. The phase is either amorphous or poly-crystalline. From TXRD investigation we found most of the crystalline films to be oriented in Si-(111) crystal orientation. In addition to X-ray analysis we analyzed the films with spectroscopic ellipsometry in order to measure the contents of crystal phase as well as the orientation of the grains. The content of hydrogen has been measured with infrared absorption spectroscopy, which is sensitive to Si-H, Si-H2 and Si-H3 bonds in the spectral range 1800-2200cm-1. Evaluation of the plasma has been done by means of electrical Langmuir-probes and plasma monitor in order to measure the plasma parameters and the ion energies as well as the ion/radical composition in the plasma. The results of our investigation will be presented with respect to the influence of plasma parameters on the film quality.
- Publication:
-
APS Annual Gaseous Electronics Meeting Abstracts
- Pub Date:
- October 1998
- Bibcode:
- 1998APS..GEC.QR203R