Investigation of the structural properties of GaAs layers grown by molecular-beam epitaxy at low temperatures Galiev, G. B. ; Imamov, R. M. ; Medvedev, B. K. ; Mokerov, V. G. ; Mukhamedzhanov, É. Kh. ; Pashaev, É. M. ; Cheglakov, V. B. Abstract Publication: Semiconductors Pub Date: October 1997 DOI: 10.1134/1.1187013 Bibcode: 1997Semic..31.1003G