Characterization of fully fabricated PHEMTs using photoelectric techniques
Abstract
Photoconduction and emission measurements have become an important tool to study the energy configuration of fully fabricated HEMTs. The spectral response provides information on the energy configuration of the well at the selected gate voltage. The transistor amplifies the photogenerated charge and this amplification provides information on charge confinement and storage.
- Publication:
-
Solid State Electronics
- Pub Date:
- October 1997
- DOI:
- 10.1016/S0038-1101(97)00100-7
- Bibcode:
- 1997SSEle..41.1529S