Flicker noise in ion-implanted silicon structures

The low-frequency noise spectra of ion-implanted silicon structures with various geometries are measured. The spectra exhibit thermal noise and f^{- γ} (flicker) noise exclusively. The flicker noise exhibits a strong dependence on the technology parameters (implantation energy and dose, post-implantation anneal temperature). A discussion of the results is given in terms of a volume effect. Noise measurements on implanted layers, produced under carefully controlled conditions, show promise as a tool to investigate flicker noise.