Defects in ion implanted diamond films (ESR study)

The defect structures in ion implanted diamond films have been studied by the electron spin resonance (ESR) method. Two kinds of paramagnetic defect centers were observed in ion implanted layers. One was a carbon dangling bond that existed in crystalline diamond ( g = 2.003, ΔH_pp = 3 Oe), and the other was a carbon dangling bond in an amorphous region of the films ( g = 2.003, ΔH_pp = 2.6-20 Oe). The defect density in ion implanted layers decreased drastically at annealing temperatures over 400°C, but it remained stable even after annealing at 1000°C.