Sputtering of III-V semiconductors under argon atom and ion bombardment
Abstract
III-V semiconductors sputtering under argon neutral and ion projectiles with energies from 150 to 600 eV was investigated. It is shown that the dependency on energy of sputtering yield is well described by the Sigmund-Falcone and Haff-Switkowski models in Yudin's approximation. It analyses the relation of the surface binding, atomization and amorphization energies.
- Publication:
-
Nuclear Instruments and Methods in Physics Research B
- Pub Date:
- May 1997
- DOI:
- Bibcode:
- 1997NIMPB.127..115S