Optimizing high efficient plasma immersion ion implantation hydrogenation for poly-Si thin film transistors

An Inductively-Coupled Plasma (ICP) source was used for defect passivation in polycrystalline silicon (poly-Si) Thin Film Transistors (TFTs) using Plasma Immersion Ion Implantation (PIII) hydrogenation. Because ICP source has higher ion density and lower working pressure, an optimal PIII hydrogenation process with low voltage (-2 kV) and high frequency (16.7 kHz) pulse has been performed. Process simulation indicates that a very high dose rate (∼ 10 ¹⁶/cm ² s) can be delivered to the substrate. The improvement of device parameters saturates in 4 min with damage free and better device reliability.