Two-parametric method for silicon detector calibration in heavy ion and fission fragment spectrometry
A new procedure has been proposed for the calibration of silicon semiconductor detectors in heavy ion spectrometry. This method exploits a two-parametric empirical equation for the value of pulse-height defect (PHD) in detectors versus masses and energies of recorded ions. A convenient practical guide using the mean channel values of light- and heavy-fragment groups in spontaneous fission of 252Cf has been developed for determining the parameters of the PHD description for a given detector. The method being applied to heavy ion spectrometry with Si-surface-barrier detectors and p-i-n diodes has demonstrated good results in a large range of masses and energies.