Interfaces of strained layer (Ge<SUB>n</SUB>Si<SUB>m</SUB>)<SUB>p</SUB> superlattices studied by second-harmonic generation - NASA/ADS

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Interfaces of strained layer (Ge_nSi_m)_p superlattices studied by second-harmonic generation

Publication:: Journal of Vacuum Science Technology B: Microelectronics and Nanometer Structures
Pub Date:: July 1997
DOI:: 10.1116/1.589423
Bibcode:: 1997JVSTB..15.1112X

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