The energy spectra of narrowgap semiconductor heterostructures: spin splitting in the case of asymmetry
Abstract
Using the twoband model, the energy spectrum is explicitly obtained as a function of the spin projection and transverse momentum for two abrupt semiconductor heterostructures of type II: (i) a double heterojunction and (ii) a system of two quantum wells, one in the valence band and one in the conduction band. The transverse motion of the carriers and the effective repulsion of the electronlike and holelike energy levels give rise to effects which cannot be properly described in the framework of the singleband theory. The two special cases form the basis for a discussion of the properties of more general classes of heterostructures of any type. The spin splitting of the energy spectrum is found to be a characteristic property of asymmetric heterostructures. Degeneracy occurs in the case of spatially symmetric heterostructures and for a class of heterostructures which are spatially asymmetric but symmetric with respect to energy. The possibility of a new type of transition is discussed.
 Publication:

Journal of Physics Condensed Matter
 Pub Date:
 December 1997
 DOI:
 10.1088/09538984/9/49/012
 Bibcode:
 1997JPCM....910929K