Exchange couplings between MnIr antiferromagnetic layers and NiFe magnetic layers have been investigated in Hf (8 nm)/MnIr (16 nm)/NiFe (5 nm)/Hf (7 nm)/Si(10 0) films formed by ion-beam sputtering. When the acceleration voltage of the ion gun was higher than 600 V and the ion current was 50-100 mA, the FCC-(1 1 1) texture of the MnIr layer became strong and the MnIr crystallites were relatively large. The large crystallites caused strong exchange couplings between the MnIr layers and the NiFe layers. The highest exchange bias field was 14.8 kA/m. A Ta (7 nm)/MnIr (14 nm)/NiFe (5 nm)/Ta (6 nm)/Si(1 0 0) film was also prepared by RF sputtering. The RF-sputtered film had the larger crystallites than the ion-beam-sputtered films. The exchange bias field was 23.1 kA/m.