Deposition of High Purity Parylene- F Using Low Pressure Low Temperature Chemical Vapor Deposition
Abstract
Parylene-F, poly(tetrafluoro-para-xylylene) (PA-F), has potential applications in microelectronics because of its high thermal stability and low dielectric constant. We found that a new precursor, 1,4-bis(trifluoromethyl) benzene (TFB) with a trace presence of α,α‧-dibromo-α,α,α‧,α‧-tetrafluoro-p-xylene (DBX), can be used to produce PA-F films. PA-F films from this precursor are produced using a reaction line and a conventional deposition system. This process is simpler than previously reported processes and produces PA-F films with less impurities. The dielectric constant of the PA-F films produced by this process is 2.25 ± 0.05 at 1 MHz. The deposition process and the material properties of the PA-F films produced are presented.
- Publication:
-
Journal of Electronic Materials
- Pub Date:
- August 1997
- DOI:
- 10.1007/s11664-997-0280-8
- Bibcode:
- 1997JEMat..26..949W
- Keywords:
-
- Chemical vapor deposition;
- dielectric constant;
- Parylene-F