Infrared near-field imaging of implanted semiconductors: Evidence of a pure dielectric contrast
Abstract
In this letter, we demonstrate the ability of our reflection mode scanning near-field optical microscope functioning in the mid-infrared to reveal infrared dielectric contrast in absence of any topographical contrast. This contrast is induced by local structures prepared by low energy boron implantation in silicon.
- Publication:
-
Applied Physics Letters
- Pub Date:
- August 1997
- DOI:
- 10.1063/1.119798
- Bibcode:
- 1997ApPhL..71..575L