Ceramic samples of chromium doped vanadium sesquioxide [(V 1- xCr x) 2O 3] have been irradiated using high energy lead ions ( 208Pb: 6.032 GeV) with various fluences (4 to 50 × 10 11ions/cm 2). Irradiation has been carried out under vacuum and at two temperatures. The effects of the irradiation temperature (77 and 300 K) on the modification of the electrical and structural properties of irradiated (V 0.997Cr 0.003) 2O 3 ceramics have been studied using resistivity measurements as a function of temperature, XRD and TEM analysis. The structural analysis has shown the existence of discontinuous latent tracks in which is concentrated the damaged volume fraction. Because of internal stress around these tracks, lead ion irradiation induced temperature shifts and broadening of the Low Temperature (LT) intrinsic transition. Irradiation of chromium doped vanadium sesquioxide in its metallic (300 K) or semiconducting state (77 K) leads to an important difference in the amplitude of the induced damage and thus in the variation of the electrical characteristics of the LT transition.