n-AlGaSb and GaSb/AlGaSb double-heterostructure lasers grown by organometallic vapor phase epitaxy
Abstract
n-type doping of AlxGa1-xSb epilayers (0≤x≤1) grown by organometallic vapor phase epitaxy has been achieved by using tritertiarybutylaluminum, triethylgallium, and trimethylantimony as the organometallic precursors and diethyltellurium as the doping source. Electron concentrations exceed 1017 cm-3 for layers with x<0.3, and decrease to ∼1016 cm-3 for x=1 as a result of higher residual acceptor concentration. Lattice-mismatched double-heterostructure diode lasers with AlGaSb cladding layers and GaSb active layer are demonstrated, and indicate the potential of OMVPE for growth of GaSb-based materials for electronic and optoelectronic devices.
- Publication:
-
Applied Physics Letters
- Pub Date:
- January 1996
- DOI:
- 10.1063/1.116698
- Bibcode:
- 1996ApPhL..68..400W