The first step in growing a GaN boule was to demonstrate the possibility of growing GaN from elemental Ga and ammonia on a substrate. Although GaN crystals were obtained the diffusion rate of gas vapor was too high. A number of other problems was uncovered and their solution was conceived. Several changes to the deposition system were made, but to succeed, a more radical redesign is needed. This new design will be proposed as a first task during Phase 2. The Phase 1 work has been a very useful experience that uncovered valuable insights.
NASA STI/Recon Technical Report N
- Pub Date:
- March 1995
- Single Crystals;
- Solid-State Physics