Squeezed Light Generation in Semiconductors
Abstract
We have generated pulsed squeezed light using the third-order nonlinear susceptibility of the semiconductor ZnS at room temperature. The photon energy was chosen to be below midgap in order to minimize nonlinear absorption. Efficient quadrature squeezing of 2.2 dB (40%) was obtained using 125 fs pulses at a center wavelength of 780 nm. The measured noise is suppressed below the quantum limit over the entire range of our detection bandwidth (30-50 MHz). The scheme employed can generally be applied to semiconductors, and opens the way for squeezed light generation over a wide range of wavelengths.
- Publication:
-
Physical Review Letters
- Pub Date:
- March 1995
- DOI:
- 10.1103/PhysRevLett.74.1728
- Bibcode:
- 1995PhRvL..74.1728F
- Keywords:
-
- 42.50.Dv;
- 42.65.Ky;
- 42.65.Re;
- 78.47.+p;
- Nonclassical states of the electromagnetic field including entangled photon states;
- quantum state engineering and measurements;
- Frequency conversion;
- harmonic generation including higher-order harmonic generation;
- Ultrafast processes;
- optical pulse generation and pulse compression;
- Time-resolved optical spectroscopies and other ultrafast optical measurements in condensed matter