Mocvd Growth and Characterization of Gallium

This dissertation focuses on the development of Ga_{rm x}In _{rm 1-x}As_ {rm y}P_{rm 1-y} based semiconductors on GaAs substrate by low pressure metal organic chemical vapor deposition. High quality Ga_{rm x}In _{rm 1-x}As _{rm y}P_ {rm 1-y} lattice-matched to GaAs over the whole compositional range has been developed. In _{0.2}Ga_ {0.8}As/GaAs strained quantum well with a room temperature photoluminescence linewidth of 13 meV, the narrowest value reported to date for this material system at room temperature, was obtained. Ga_ {0.51}In_{0.49} P/GaAs superlattices with no strained interface were achieved. The outstanding quality of the above materials and device structures is evident in the characteristic spectra and the excellent device performance. Several characterization tools were developed for the better understanding of materials and structures. Of these, photovoltage spectroscopy was adapted for the investigation of Ga_{0.51}In _{0.49}P/GaAs quantum confinement structures. Room temperature exciton absorptions corresponding to intersubband transitions were observed for the first time. The advantages of this technique are salient on the simplicity of the measurement and the strong, low noise signal at room temperature in contrast to photoluminescence excitation and absorption spectroscopy. X-ray diffraction and dynamic simulation were also widely used in this work for the optimization of the interfaces and the determination of the structural parameters of superlattice structures. The effect of substrate misorientation on the measurement of superlattice structural parameters was investigated. A correct procedure for the x-ray diffraction measurement of a sample grown on a misoriented substrate was addressed. In addition, the interfaces of Ga _{0.51}In_{0.49 }P/GaAs superlattices were investigated in detail by x-ray diffraction and dynamic simulation. The correlation between diffraction patterns and interface strain status was established, which can be used to identify the strained interface and number of strained interfaces for Ga_{0.51}In _{0.49}P/GaAs superlattices. X -ray diffraction and simulation were also used for the determination of the layer thickness and In composition for In _{rm x}Ga_ {rm 1-x}As/GaAs strained quantum well. Photoluminescence was applied in this work to study temperature dependence of the photoluminescence spectra from Ga_{rm x}In _{rm 1-x}As _{rm y}P_ {rm 1-y}/Ga_{0.51 }In_{0.49}P double heterostructures and to analyze quality of Ga _{0.51}In_{0.49 }P/GaAs quantum wells grown on GaAs, InP and Si substrates.