Ion beam induced epitaxial crystallization and interfacial amorphization at amorphous/crystalline interfaces in germanium
<100> and <111>-Ge single crystals were preamorphized in a thin surface layer using 50 keV or 85 keV N + ions. Ion beam induced epitaxial crystallization (IBIEC) and interfacial amorphization (IBIIA) at the amorphous/crystalline interface were studied using different kinds of high energy ion beams. The crystallization rate for the <100>-Ge is about 1.5 times higher than that for <111>-Ge. The total recrystallised thickness depends mainly on the nuclear energy deposition and the irradiation temperature. Interfacial amorphization is detected in Ge for the first time. Cross section TEM micrographs show a sharp amorphous/crystalline interface for both IBIEC and IBIIA. The fit of the experimental data yields an activation energy of 0.82 eV for IBIEC and 1.16 eV for IBIIA.