The high-energy Zn + ion implantation of InP is a promising method for the formation of buried p-type conducting layers. Defect properties and inclusion mechanism of zinc implanted samples with energies of 1.2 and 2.5 MeV to doses of 5 × 10 14-5 × 10 15 cm -2 at a temperature of 200°C were investigated with ion beam methods, XTEM and SNMS to some extent. Also the influence of rapid thermal annealing on the structural properties was studied. After implantation we found no evidence for amorphization or extended defects but point-like defects. During annealing the surface region recovered nearly completely while in depth the point-like defects agglomerated in dislocation loops. Further we observed a remarkable redistribution of the Zn atoms due to annealing.