Recombination enhanced suppression of deep trap accumulation in silicon during He + ion implantation
The influence of in situ forward bias on the accumulation of defect complexes in p +-n diodes during 75 keV He + ion implantation has been investigated. Deep level transient spectrometry was used to characterize the concentration, spatial distribution and energy levels of implantation induced deep traps. It was found that in situ forward bias with a current density of 2 A/cm 2 causes more than an order of magnitude suppression of deep trap accumulation. This is attributed to recombination enhanced migration of mobile constituents prior to defect complex formation. A new major electron deep trap located at Ec - 0.55 eV  was investigated. Its annealing kinetics, charge carrier capture cross section, and spatial distribution with respect to previously known deep traps are presented.