Stimulated Emission by Current Injection from an AlGaN/GaN/GaInN Quantum Well Device
Abstract
Quantum well structures composed of GaInN well and GaN barrier were fabricated. Room-temperature stimulated emission by pulsed current injection is observed from group III nitride using the very thin active layer, for the first time.
- Publication:
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Japanese Journal of Applied Physics
- Pub Date:
- November 1995
- DOI:
- Bibcode:
- 1995JaJAP..34L1517A