Monolithic integration on InP of a Wannier Stark modulator with a strained MQW DFB 1.55-micron laser
Abstract
We present the technical approach and the preliminary device results on the first integration of a Wannier Stark (WS) electroabsorption (EA) modulator with a DFB laser on InP. The WS modulator active layer consists of a lattice matched InGaAs-InAlAs superlattice (SL) grown by solid source MBE (Molecular Beam Epitaxy). It is butt-coupled to a laser grown by AP-MOVPE whose active layer includes a strained InGaAsP-InGaAsP MQW stack. Device results cover static performances of integrated lasers and modulators, and measurements of high frequency characteristics (small signal bandwidth and 10 Gb/s eye diagram).
- Publication:
-
IEEE Photonics Technology Letters
- Pub Date:
- February 1995
- DOI:
- 10.1109/68.345917
- Bibcode:
- 1995IPTL....7..185A
- Keywords:
-
- Distributed Feedback Lasers;
- Electromagnetic Absorption;
- Indium Aluminum Arsenides;
- Indium Gallium Arsenides;
- Indium Phosphates;
- Integrated Optics;
- Modulators;
- Molecular Beam Epitaxy;
- Quantum Well Lasers;
- Stark Effect;
- Bandwidth;
- Charge Carriers;
- Frequency Distribution;
- High Frequencies;
- Light Modulation;
- Superlattices;
- Electronics and Electrical Engineering