Total electron yield (TEY) is frequently used for EXAFS measurements. A theoretical correlation of the jump-like increase of TEY in the vicinity of an absorption edge to the composition c and the thickness t of a multicomponent layer allows a quantification of c and t in analogy to XRF. We performed experiments and calculations on thin layers of AlxGa1-xAs on GaAs substrates and confirmed the validity of the theoretical approach in the range 0.2 < x < 0.6 and 20 nm lt; t < 120 nm. Thus, TEY is an excellent candidate for quantitative surface analysis in the nanometer range.
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