Sub-millimeterwave semiconductor signal sources
Abstract
Research on Indium Phosphide Pseudomorphic High Electron Mobility Transistors (InP PHEMT's) resulted in 155 GHz and 215 GHz monolithic integrated circuit oscillators. These circuits represent the highest frequencies achieved to date for a fundamental signal source using a three terminal device. Advances in epitaxial growth of the pseudomorphic semiconductor structures and the achievement of low-resistance, 50-nm-long self-aligned gates resulted in the highest short circuit current gain cutoff frequency (ft) transistors ever reported. The planar quasi-optical slot oscillators verify the high frequency capabilities of the InP PHEMT. Hughes Laboratories performed the research on materials, device design and processing device characterization and modeling. The University of Michigan designed the oscillator circuits, including the integrated planar antennas, and measured the, oscillator performance.
- Publication:
-
Final Report
- Pub Date:
- April 1994
- Bibcode:
- 1994hrl..rept.....R
- Keywords:
-
- High Electron Mobility Transistors;
- Indium Phosphides;
- Integrated Circuits;
- Oscillators;
- Semiconductor Devices;
- Signal Generators;
- Submillimeter Waves;
- Electron Mobility;
- Frequencies;
- Molecular Beam Epitaxy;
- Short Circuit Currents;
- Electronics and Electrical Engineering