Observation of 1D electron states at the boundary between an MOS and a Schottky contact on Si(100) by electron tunneling

Electron quantum wires on Si surfaces have been prepared at the boundary between a Schottky contact and an MOS structure with electron inversion layer at the Si-SiO ₂ interface. In tunneling from the metal into the inversion layer and vice versa the spectroscopic signal {d ²I }/{dV ²} exhibits short-period oscillations which can be attributed to the 1D electron states at the edge of the 2D electron gas.