A novel diac-like switch using double triangular barriers
Abstract
In this study, a new diac-like switch using GaAs double triangular barrier structures (DTBS) prepared by molecular beam epitaxy (MBE) has been fabricated and demonstrated. Unique bidirectional current-voltage ( I- V) characteristics between 300 and 77 K were realized for the first time. Large on/off voltage differences and control efficiency were observed in both directions. Based on I- V measurements, the operation mechanism of the diac-like switch was analyzed and is discussed in detail using an equivalent circuit approach. A temperature-dependent effect on the switching voltage, VS, and holding voltage, VH, was also investigated.
- Publication:
-
Solid State Electronics
- Pub Date:
- November 1994
- DOI:
- 10.1016/0038-1101(94)90176-7
- Bibcode:
- 1994SSEle..37.1849Y