Fowler-nordheim emission and electron trapping in pure N 2O/SiH 4 PECVD oxide deposited on N 2, H 2 and O 2 plasma precleaned Si wafers
Abstract
- Publication:
-
Solid State Electronics
- Pub Date:
- September 1994
- DOI:
- 10.1016/0038-1101(94)90050-7
- Bibcode:
- 1994SSEle..37.1671U