Reconstruction of semiconductor doping profile from laserbeaminduced current image
Abstract
In this paper, the authors study the reconstruction of a semiconductor doping profile or, equivalently, the equilibrium potential, from its LBIC (laserbeaminduced current) image. For the onedimensional case, the authors first characterize the attainable class of current measurements, and from this they show the nonuniqueness of the inverse problem. Then the reconstruction of the equilibrium potential is reduced to finding two constants subject to some constraints. A reconstruction algorithm is established based on a least squares formulation of the problem. The case of noisecollapsed data is also discussed. For a special case of twodimensional domain, the authors apply the onedimensional algorithm supplemented with a correction from the other spatial direction to establish an alternate direction iteration algorithm for reconstruction of the twodimensional equilibrium potential. The authors also present some numerical examples to illustrate the reconstruction results by these algorithms.
 Publication:

SIAM Journal of Applied Mathematics
 Pub Date:
 August 1994
 Bibcode:
 1994SJAM...54.1067F
 Keywords:

 Additives;
 Algorithms;
 Crystal Defects;
 Image Reconstruction;
 Inductance;
 Laser Applications;
 Laser Beams;
 Mathematical Models;
 Nondestructive Tests;
 Reconstruction;
 Semiconductors (Materials);
 Constraints;
 Current Distribution;
 Electrical Measurement;
 Equilibrium Methods;
 Inverse Kinematics;
 Iteration;
 Least Squares Method;
 Noise Spectra;
 Electronics and Electrical Engineering